Data storage device and method of forming the same

ABSTRACT

A resistive cross point memory cell array comprising a plurality of word lines, a plurality of bit lines, a plurality of cross points formed by the word lines and the bit lines, and a plurality of memory cells, each of the memory cells being located at a different one of the cross points, wherein a first bit line comprises a distributed series diode along an entire length of the bit line such that each of the associated memory cells located along the first bit line is coupled between the distributed series diode and an associated word line.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional application, which is based on andclaims priority to U.S. Utility patent application Ser. No. 10/657,385,filed on Sep. 8, 2003, and which is incorporated by reference herein inits entirety.

BACKGROUND

Many different resistive cross point memory cell arrays have beenproposed, including resistive cross point memory cell arrays havingmagnetic random access memory (MRAM) elements, phase change memoryelements, resistive polymer memory elements, polysilicon memoryelements, and write-once (e.g., fuse based or anti-fuse based) resistivememory elements.

A typical storage device, for example, an MRAM storage device, includesan array of memory cells. Word lines may extend along rows of the memorycells, and bit lines may extend along columns of the memory cells. Eachmemory cell is located at a cross point of a word line and bit line.Each memory cell stores a bit of information as an orientation of amagnetization. In particular, the magnetization of each memory cellassumes one of two stable orientations at any given time. These twostable orientations, parallel and anti-parallel, may, for example,represent logic values of 0 and 1. The magnetization orientation affectsthe resistance of a memory cell. For example, the resistance of a memorycell may be first value, R, if the magnetization orientation isparallel, and the resistance of the memory cell may be increased to asecond value, R+ΔR, if the magnetization orientation is changed fromparallel to anti-parallel.

In general, the logic state of a resistive cross point memory cell maybe read by sensing the resistance state of the selected memory cell.However, sensing the resistance state of a single memory cell in thearray typically is difficult because all of the memory cells in aresistive cross point memory cell array are interconnected by manyparallel paths. Thus, the resistance that is determined at one crosspoint equals the resistance of the memory cell at the cross point inparallel with the resistance of memory cells in the other word lines andbit lines. This means that, in an array that does not use switches ordiodes to isolate memory cells from one another, the other memory cellsin the same column and row may be rendered unusable. Thus, a simpleshorted memory element can cause a column-wide/row-wide error. Inaddition, if the selected memory cell being sensed has a differentresistance state due to stored magnetization, a small differentialvoltage may develop. This small differential voltage may give rise toparasitic or “sneak path” currents that may interfere with the sensingof the resistance state of the selected memory cell.

Thus, a need exists for the reliable isolation of selected resistivecross point memory cells while data stored on a selected memory cell isbeing sensed.

SUMMARY

The present disclosure relates to data storage devices and methods forforming a data storage device. In one embodiment, a data storage devicecomprises a plurality of word lines, a plurality of bit lines, aplurality of cross points formed by the word lines and the bit lines,and a plurality of memory cells, each of the memory cells being locatedat a different one of the cross points, wherein a first bit linecomprises a distributed series diode along an entire length of the bitline such that each of the associated memory cells located along thefirst bit line is coupled between the distributed series diode and anassociated word line.

In one embodiment, a method for forming a data storage device comprisesforming a plurality of word lines in a first plane, each of the wordlines being substantially parallel to the other word lines, forming aplurality of memory elements on the plurality of word lines, and forminga plurality of bit lines, each bit line being a distributed seriesdiode, the plurality of bit lines being disposed in a second plane thatis substantially parallel to the first plane, thereby forming aplurality of cross-points with the plurality of word lines, wherein eachmemory element is disposed at one of the cross points.

DESCRIPTION OF DRAWINGS

The methods and devices of this disclosure can be better understood withreference to the following drawings. The drawings are not necessarily toscale.

FIG. 1 is a circuit diagram of an embodiment of a data storage devicethat includes a resistive cross point memory cell array.

FIG. 2 is a top perspective view of an embodiment of a portion of theresistive cross point memory cell array shown in FIG. 1.

FIG. 3 is a circuit diagram of an embodiment of a portion of a resistivecross point memory cell array shown in FIG. 2.

FIG. 4 is a circuit diagram of an embodiment of a portion of theresistive cross point memory cell array shown in FIG. 1, including adistributed series diode bit line.

FIG. 5 is a circuit diagram of an embodiment of an effective grouping ofword lines by the distributed series diode bit line shown in FIG. 4.

FIG. 6 is a circuit diagram of an embodiment of a portion of theresistive cross point memory cell array shown in FIG. 1.

FIG. 7 is a circuit diagram of an embodiment of a sense amplifiercircuit that is operable to sense current flow through a memory cell ofone or more associated groups of memory cells of the resistive crosspoint memory cell array shown in FIG. 1.

FIG. 8 is a circuit diagram of an embodiment of a portion of theresistive cross point memory cell array shown in FIG. 1

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings which form a part hereof, and in which are shownby way of illustration specific embodiments of cross point memory cellarrays. Other embodiments may be utilized and structural or processchanges may be made. The following detailed description, therefore, isnot to be taken in a limiting sense.

Referring to FIG. 1, in one embodiment, a data storage device 10includes a resistive cross point memory cell array 12, a plurality ofwords lines 14 that extend along rows of the cross point memory cellarray 12, and a plurality of distributed series diode bit lines 16 thatextend along columns of the cross point memory cell array 12. The memorycells 18 of memory cell array 12 may be implemented as any one of a widevariety of conventional resistive memory elements, including magneticrandom access memory (MRAM) elements, phase change memory elements,resistive polymer memory elements, polysilicon memory elements, andwrite-once (e.g., fuse based or anti-fuse based) resistive memoryelements.

Data storage device 10 also includes multiple read circuits 20, each ofwhich is coupled to one or more associated sets of memory cells 18 by arespective bit line 16.

Each read circuit 20 is operable to sense current flow through a memorycell of the associated group (or groups) or memory cells 18. A steeringcircuit 22 selectively couples an associated read circuit 20 to aselected bit line 16 based upon a received bit line address (Ay). Eachsteering circuit 22 includes a set of switches that connects each bitline 16 to a source of a constant array voltage (V_(ARRAY)) or to anassociated read circuit 20. A word line decode circuit 24 selectivelyactivates a particular word line 14 based upon a received word lineaddress (Ax). During read operations, word line decode circuit 24 mayactivate a selected word line 14 by applying selectively to each of wordlines 14 either a constant array voltage (V_(ARRAY)) or a readpotential. An output of each read circuit 20 is coupled to an input of arespective input/output (I/O) pad of data storage device 10.

In the illustrated embodiment, the resistive cross point memory cellarray 12 is shown to have a relatively small number of memory cells 18.Other embodiments, however, may include a large number of memory cells.For example, in one embodiment, resistive cross point memory cell array12 includes a 1024×1024 array of memory cells 17 and two hundred andfifty-six read circuits 20, each read circuit 20 fitting a pitch of fourbit lines 16. In the illustrated embodiment, a total of four bit lines16 may be multiplexed into each read circuit 20. Some embodiments mayinclude multiple levels of memory cell arrays 12. In those embodiments,bit lines 16 from different levels may be multiplexed into the readcircuits 12.

In other embodiments, data storage device 10 may also include a writecircuit (not shown) for writing information into the memory cells 18 ofthe resistive cross point memory cell array 12, hereinafter referred toas memory array 12.

As explained in detail below, the architecture of memory array 12enables high-density fabrication and high-speed operation with adistributed series diode bit line 16 that has practical dimensions andcurrent density characteristics. In addition, the distributed seriesdiode bit line 16 provides a resistance per unit length that is used togroup the word lines 14 of the memory array 12 and act as a resistanceelement in series with each memory cell 18 of the memory array 12 inorder to provide short tolerant operation.

Referring now to FIG. 2, a perspective view of a portion of a memoryarray 12 is shown including a distributed series diode bit line 16 thatprovides practical dimensions, current densities, and resistance. Asshown, the word lines 14 are typically low resistance conductors made ofa metal such as aluminum (Al) or copper (Cu). A memory cell 18 isdisposed on the word line 14 such as an MRAM element, a phase changememory cell, a resistive polymer memory cell, a polysilicon memory cell,or a write-once (e.g., fuse based or anti-fuse based) resistive memorycell. Note that multi-layer, multiple cells may be stacked on oneanother. However, for ease of description, the memory cell 18,regardless of construction, is referred to in the singular tensethroughout the application. Distributed series diode bit lines 16,hereinafter referred to as a bit lines 16, are then formed such thateach memory cell 18 is disposed between a single word line 14 and asingle bit line 16. As shown, the bit line 16 includes a metal layer 17and a semi-conductor layer 19 that are joined with a material layer 21that forms a diode therebetween. The metal layer 17 is made of a lowresistance metal such as aluminum or copper, while the semi-conductorlayer 19 is made of materials such as carbon, silicon, germanium, indiumtelluride, antinomy telluride, or silicon-tantalum (asemiconductor-metal alloy). Some embodiments of the bit line 16 may havematerial layers 21 that can be n or p doped semi-conductor materialsthat form junction diodes with the semi-conductor layer 19.Alternatively, the material layer 21 can be metal such that the materiallayer 21 and the semi-conductor 19 form a schottky diode.

FIG. 3 is a circuit diagram of the portion of the memory array 12 shownin FIG. 2. By properly selecting the materials of the material layer 21and the semiconductor layer 19, the resistance per unit length, orlateral resistance, of the bit line 16 can be determined. The materialscan be selected such that the bit line 16 exhibits a lateral resistancethat allows the word lines 14 associated with a bit line 16 to beeffectively grouped. The size of the word line groups 15 depends uponthe lateral resistance exhibited by the bit line 16. As shown, thelateral resistance of the bit line 16 is represented by the resistiveelements 27, and, by way of example, is selected such that the wordlines 14 are arranged in a group of three, although other sized groupsare possible. Grouping of the word lines 14 is possible because thelateral resistance of the bit line 16 diminishes the effects of portionsof the memory array 12 outside of the group during operations conductedwithin the word line group 15. For example, during read operations, ashorted memory cell along the selected bit line 16 but outside of theword line group 15 will not affect the read operations. Grouping of theword lines 14 allows the forward characteristics of segments of thedistributed diode bit line 16 to be utilized, such that lower currentdensities are possible than with memory arrays 12 utilizing singlediodes for each memory cell. In addition, within the effective word linegroup 15, the lateral resistance can be treated as a resistance elementin series with those memory cells 18 that are not being read. Therefore,if one of the memory cells 18 not being read is shorted, it will notdraw excessive current and the memory array exhibits short tolerancewithin the group of word lines 14.

FIG. 4 is a circuit diagram of a distributed series diode bit line 16aand a number of the associated word lines 14 within the memory array 12(FIG. 1). The metal layer 17, the material layer 21 and thesemiconductor layer 19 (FIG. 2) are shown by the lumped electrical modelof bit line 16a including the metal bit line 23, diode elements 25, andresistive elements 27. Although individual electrical components areshown in the lumped model of the distributed series diode bit line 16a,the metal layer 17, material layer 21, and semiconductor layer 19 arecontinuous for the entire length of the bit line 16. As shown in FIG. 4,a memory cell 18 has not been selected for the read operation. Once amemory cell 18 is chosen, such as target memory element 18 a, targetmemory cell 18 a will have a nearest number of unselected word lines 14,which along with the selected word line 14 a, will form an effectiveword line group 15, as shown in FIG. 5. The cumulative lateralresistance of the bit line 16 a, as determined by a defined lateralresistance per unit length, increases farther from the target memorycell 18 a, thereby reducing the effects of distant elements in thememory array 12 (FIG. 1) and forming the effective group of word lines15. For ease of description, a group of three word lines 14 is used todescribe a read operation of the target memory cell 18 a.

Referring to the embodiment of FIG. 6, the lateral resistance of thedistributed series diode bit line 16 is selected such that the memoryelements 18 and their respective word lines 14 are formed into groups ofthree about a target memory cell 18a. Within the effective group of wordlines 15, each memory cell 18 is connected between a respective wordline 14 and segment of the distributed series diode bit line 16 whichfunctions as a common group isolation diode, as represented by diodeelements 25 connected by dashed lines. Memory array 12 features thehigh-speed operational advantages associated with diode isolationarchitectures and the high-density advantages of equipotential isolationarchitectures in an architecture that may be implemented with isolationdiodes that have practical dimensions and current densitycharacteristics. In some embodiments, distributed series diode bit lines16 may be fabricated with memory cells 18 using a conventional thin filmdiode fabrication technology, thereby allowing multi-level resistivecross point memory arrays to be constructed.

In operation, data is sensed in a target memory cell 18 a of memoryarray 12 by selecting a word line 14 a corresponding to the selectedmemory cell 18 a, and connecting it to a low potential (roughly theground potential). At the same time, groups of bit lines 16 areconnected to read circuits 20 in reference (18 b)/sense (18 a) pairs, asdescribed in detail below in connection with FIG. 7.

The operation of an embodiment of a memory array 12 including adistributed series diode bit line will now be discussed. The memoryarray includes a sense amplifier as disclosed in U.S. Pat. No.6,456,524, which is incorporated herein by reference. An array potential(V_(ARRAY)) is applied to the unselected bit lines 16 c from the outputof an equipotential generator 32, which also is described in detailbelow.

The equipotential generator 32 applies a control voltage to the readcircuits 20 coupled to the selected bit lines 16 a, 16 b to set bit linevoltages so that the voltage that is applied to the target memory cell18 a is equal to the array potential (V_(ARRAY)). The equipotentialgenerator 32 also applies a control voltage to the steering circuits 22coupled to the unselected bit lines 16 c to set the unselected bit linevoltage so that the voltage that is applied to the unselected memorycells is equal to the array potential (V_(ARRAY)).

Unselected word lines 14 in a selected group 15 (FIG. 6) of word lines14 are connected together and form an averaged feedback voltage as asecond input to the equipotential generator 32. The equipotentialgenerator 32 develops an output voltage (V_(G)) from the difference ofthe applied array voltage (V_(ARRAY)) and the feedback voltage to thesource follower transistors 44 to achieve a voltage equal to V_(ARRAY)applied to the selected reference memory cell 18 b, the target memorycell 18 a, and the unselected memory cell 18 c connected to the selectedword line 14 a. In such a case, the memory elements connected to theselected word line 14 a have approximately V_(ARRAY) applied across themand all of the other unselected memory elements 40, 42, 43 that areassociated with the selected bit lines 16 and the effective word linegroup 15 have approximately zero potential across them. As a result, thebit line read circuits 20 receive sense current only from the selectedmemory elements. The unselected word lines 14, i.e. those not inselected group 15 (FIG. 6), are connected to a high potential (on theorder of twice the magnitude of the voltage drop of the distributedseries diode 25) and are isolated from the selected group 15 bit lines14 by the reverse biased distributed series diode 25. The unselected bitlines 16 c have a voltage (V_(G)) applied to them so that V_(ARRAY) isapplied across the associated memory elements and the associateddistributed series diode 25. Consequently, a parasitic bit line currentflows in the unselected bit lines 16 c during a read operation.

As shown in the embodiment of FIG. 7, each read circuit 20 includes asense amplifier circuit 30 and an equipotential generator circuit 32.Sense amplifier 30 may be implemented as a current mode differentialamplifier. In the embodiment of FIG. 7, two bit lines of the memory cellarray are shown: a reference bit line 16 b and a sense bit line 16 a.The reference bit line 16 b and the sense bit line 16a are shown inequivalent circuit form having, respectively, a selected referencememory cell 18 b and a target memory cell 18 a; the other memory cellsare represented by resistors 40, 42. In operation, a logic ‘1’ or ‘0’may be sensed by detecting the difference between a current that isgenerated in the reference bit line and a current that is generated inthe sense bit line.

During a read operation, the equipotential generator 32 develops a gatevoltage signal (V_(G)) that is applied to a set of voltage followertransistors 44, one in each selected bit line. Each of the voltagefollower transistors 44 sets a respective bit line voltage (e.g.,V_(REF.1) and V_(SENSE1)) to a narrow voltage range while providing ahigh impedance to the sense nodes in a sense amplifier circuit 30. Sensecurrents that flow through the voltage follower transistors 44 passthrough the distributed series diode 25 and then through he selectedmemory elements 18 a, 18 b. The voltage level V_(G) preferably is set sothat the voltages V_(REF.2) and V_(SENSE2), which are applied across thememory elements 18 a, 18 b, are close to the array voltage V_(ARRAY). Ifthe voltage V_(REF.2) and V_(SENSE2) are equal to V_(ARRAY) no parasiticcurrent will flow through the sneak path memory elements 40, 42, asexplained above. A similar action occurs for the unselected bit lines,the output of the equipotential generator (V_(G)) applies a gate voltageto a source follower associated with the unselected bit lines to apply avoltage approximately equal to V_(ARRAY) to the unselected memory cells18 c so that no parasitic sneak path currents will flow in associatedsneak path memory cells 43.

In the embodiment shown, all of the unselected word lines in a word linegroup 15 are coupled together at node A and develop an averaged voltageV_(A) to form the feedback voltage as the second input to theequipotential generator circuit 32. Connecting the unselected word linestogether forms a voltage divider circuit that samples the voltagesapplied to the selected memory cells. These voltages are approximatelyequal, and the output of the unselected memory element voltage dividerrepresents an average of the slightly different voltages applied to theselected memory cells. In one embodiment, equipotential generatorcircuit 32 is implemented as an operational amplifier control circuithaving a first input coupled to a source of V_(ARRAY), a second inputcoupled to the unselected word lines 14 (V_(A)) through row select diodecircuits (not shown), and an output coupled to the gates of voltagefollower transistors 44. The constant array voltage may be provided byan external circuit (not shown). When V_(A) is equal to V_(ARRAY), V_(G)is set so that V_(REF2) and V_(SENSE2), and V_(A) all have approximatelythe same magnitude so that an insubstantial current will flow acrossnode A. This technique also works well when multiple sense amplifiersare used, i.e., when multiple bit pairs are sensed at the same time.

In addition to effectively grouping word lines 14 and therefore allowingfor the effective application of equipotential isolation, the lateralresistance of a distributed series diode bit line 16 provides shorttolerance and prevents sneak path currents within the word line group15. Short tolerance and the prevention of sneak currents will now bediscussed with reference to FIG. 8. If a memory cell 18 other than theselected memory cell 18 a is shorted, its resistance will be theresistance of a portion of the distributed series diode bit line 16,that resistance being at least the resistive value of resistive element27. The selected memory cell 18 a is represented by a first resistor 50,and unselected memory cells are represented by second and thirdresistors 52 and 54. The first resistor 50 is selected by applying anoperating voltage (V_(s)) to the bit line 16 and a ground to theassociated word line 14 a. To prevent sneak path currents from obscuringa sense current, an equal operating potential (V_(b)=V_(s)) is appliedto the unselected word lines 14. Applying equal potential across theunselected memory cells 18 d, 18 e blocks sneak path currents fromflowing therethrough.

Ideal sense amplifiers apply an equal potential to the selected bit lineand the subset of unselected word and bit lines. If, however, the senseamplifiers are not ideal, the potentials are not exactly equal and sneakpath currents can flow through the memory array 12 (FIG. 1) during readoperations.

Consider a read operation on a selected memory cell 18 a lying along thesame bit line as a shorted memory element 18 d (resistive element 52).The shorted memory cell 18 d has a resistance at least equal to theresistance of the associated segment of the distributed series diode bitline 27. Even if the sense amplifiers are not ideal, the shorted memorycell 18 d does not divert a significant amount of sneak path currentthrough the shorted memory cell 18 d and does not significantly affectthe sense current during read operations. As a result, the shortedmemory cell 18 d does not cause a column-wide failure. Only a singlerandomized bit error results. The single randomized bit error can bequickly and easily corrected by error code correction.

Now compare the read operation just described with a read operationinvolving conventional memory elements and non-ideal sense amplifiers. Aconventional shorted memory element would draw a significant sneak pathcurrent that, when combined with the sense current, would cause thesense amplifier to cut-off or saturate. As a result, a bit error wouldoccur during a read operation on the selected memory elementconfiguration. Moreover, the shorted memory element of the conventionalconfiguration would divert the sense current during read operations inevery other memory element of the bit line. A column-wide error wouldresult.

1.-14. (canceled)
 15. A method for forming a data storage device,comprising: forming a plurality of word lines in a first plane; forminga plurality of memory elements on the plurality of word lines; andforming a plurality of bit lines, each bit line being a distributedseries diode, the plurality of bit lines being disposed in a secondplane that is substantially parallel to the first plane, thereby forminga plurality of cross-points with the plurality of word lines; whereineach memory element is disposed at one of the cross points.
 16. Themethod of claim 15, wherein forming a distributed series diode furthercomprises: forming a semi-conductor layer; forming a material layer; andforming a metal layer.
 17. The method of claim 15, further comprisingforming multiple read circuits, each read circuit being coupled to atleast one bit line and operable to sense current flow through a selectedmemory cell.
 18. The method of claim 17, wherein each read circuitcomprises a differential amplifier.
 19. The method of claim 18, whereinthe differential amplifier is operable to compare current flowingthrough a selected memory cell with current flowing through at least onereference cell.
 20. The method of claim 19, further comprising formingan equipotential generator coupled to the word lines and the bit linesand operable to set voltage levels in the memory device to preventparasitic currents from flowing through unselected memory cells. 21.-23.(canceled)
 24. A method for forming a data storage device, comprising:forming a plurality of word lines; forming a plurality of memoryelements on the plurality of word lines; forming at least onedistributed series diode; and forming a plurality of cross-points with aplurality of word lines; wherein each memory element is disposed at oneof the cross points and the at least one distributed series diode isadjacent to one of the plurality of bit lines.
 25. The method of claim24, wherein forming a distributed series diode further comprises:forming a semi-conductor layer; forming a material layer; and forming ametal layer.
 26. The method of claim 24, wherein forming a distributedseries diode further comprises forming a distributed series diodeadjacent each bit line.
 27. A method for using a data storage device,comprising: providing an array of memory elements located atcross-points of word lines and bit lines, the word lines being arrangedin a first plane, the bit lines being arranged in a second plane, eachof the bit lines comprising a distributed series diode; and selectivelyisolating a first group of the memory elements from remaining memoryelements along a first of the bit lines.
 28. The method of claim 27,further comprising preventing parasitic currents from flowing throughunselected ones of the memory elements.
 29. The method of claim 28,wherein preventing parasitic currents comprises using an equipotentialgenerator coupled to the word lines and the bit lines.
 30. The method ofclaim 27, wherein selectively isolating comprises using feedback from anunselected one of the word lines.
 31. The method of claim 27, furthercomprising storing data in at least some of the memory elements.
 32. Themethod of claim 31, further comprising reading data from a selected oneof the memory elements.
 33. The method of claim 32, wherein reading datacomprises sensing current flow through the selected one of the memoryelements.
 34. The method of claim 33, wherein reading data furthercomprises comparing the current flow through the selected one of thememory elements with current flowing through at least one referencememory element.
 35. The method of claim 33, wherein reading datacomprises converting an analog differential sense voltage to a digitaloutput read signal.
 36. The method of claim 27, wherein providing anarray of memory elements comprises forming the distributed series diodewith a semi-conductor layer, a material layer and a metal layer.
 37. Themethod of claim 36, wherein the material layer is located between thesemi-conductor layer and the metal layer.